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| DSEP 60-04A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 60 A VRRM = 400 V trr = 30 ns A C VRSM V 400 VRRM V 400 Type TO-247 AD DSEP 60-04A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 120C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 3.5 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 60 600 1.6 0.4 -55...+175 175 -55...+150 A A A mJ A C C C W Nm g Features * * * * * * * International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders TC = 25C mounting torque typical 230 0.8...1.2 6 Symbol IR Conditions TVJ = 25C; VR = VRRM TVJ = 150C;VR = VRRM IF = 60 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 650 2 1.01 1.24 0.65 0.25 A mA V V K/W K/W ns 7.5 A VF RthJC RthCH t rr IRM Advantages * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf IF = 1 A; -di/dt = 300 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 130 A; -diF/dt = 100 A/s TVJ = 100C 30 6.0 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 1-2 311 DSEP 60-04A 100 A 80 IF 60 TVJ = 150C TVJ = 100C TVJ = 25C 40 1000 20 20 500 0 100 10 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt Qr 1500 3000 nC 2500 2000 TVJ = 100C VR = 200 V 70 A 60 50 IRM IF = 120 A IF = 60 A IF = 30 A TVJ = 100C VR = 200 V IF = 120 A IF = 60 A IF = 30 A 40 30 0 0.0 0.4 0.8 1.2 V VF 1.6 Fig. 1 Forward current IF versus VF 2.0 Fig. 2 Typ. reverse recovery charge Qr 160 ns 140 Fig. 3 Typ. peak reverse current IRM 50 V 40 1.80 s VFR 1.75 tfr 1.70 TVJ = 100C IF = 60 A TVJ = 100C VR = 200 V IF = 120 A tfr 1.5 Kf 1.0 IRM 0.5 Qr trr 120 100 IF = 60 A IF = 30 A VFR 30 20 80 60 40 0 40 80 120 C 160 TVJ 0 200 400 600 A/s 800 -diF/dt 1000 10 1.65 1.60 0.0 0 0 200 400 1.55 600 A/s 1000 800 diF/dt Fig. 4 Typ. dynamic parameters Qr, IRM Fig. 5 Typ. recovery time trr versus -diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr 10 K/W 1 ZthJC 0.1 0.01 0.001 0.0001 DSEP 60-04A 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 2-2 311 |
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